BC858B

PNPGeneralPurposeTransistor

PNPGeneralPurposeTransistor Features 1)BVCEO

BC858B

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

BC858B

SMALLSIGNALPNPTRANSISTORS

SMALLSIGNALPNPTRANSISTORS ■SILICONEPITAXIALPLANARPNPTRANSISTORS ■MINIATUREPLASTICPACKAGEFORAPPLICATIONINSURFACEMOUNTINGCIRCUITS ■VERYLOWNOISEAFAMPLIFIER ■NPNCOMPLEMENTSFORBC857ISBC847

BC858B

SURFACEMOUNTPNPSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORBC856,BC857andBC858SeriestypesarePNPSiliconTransistorsmanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforgeneralpurposeswitchingandamplifierapplications. MARKINGCODE:PLEASESEEMARKINGCODET

BC858B

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistor PNPSilicon P/bLead(Pb)-Free

BC858B

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryNPNTypesAvailable(BC846-BC848) •ForSwitchingandAFAmplifierApplications •LeadFree/RoHSCompliant(Note3)

BC858B

0.2WattsPNPPlastic-EncapsulateTransistors

Features ◇Epitaxialplanardieconstruction ◇Surfacedevicetypemounting ◇Moisturesensitivitylevel1 ◇MatteTin(Sn)leadfinishwithNickel(Ni)underplate ◇PbfreeversionandRoHScompliant ◇Greencompound(Halogenfree)withsuffixGon packingcodeandprefixGondatecode

BC858B

PNPGENERALPURPOSETRANSISTORS

VOLTAGE65/45/30VoltsPOWER225mW FEATURES •GeneralPurposeAmplifierApplications •NPNEpitaxialSilicon,PlanarDesign •CollectorCurrentIC=-100mA •Complimentary(PNP)Devices:BC846/BC847/BC848/BC849Series •IncompliancewithEURoHS2002/95/ECdirectives

BC858B

NPNgeneralpurposeTransistor

FEATURES ●Lowcurrent.(max.100mA). ●Lowvoltage.. APPLICATIONS ●Generalpurposeswitchingandamplification.

BC858B

PNPGeneralPurposeTransistor

Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications