BC857M_SERIES

PNP general purpose transistors

FEATURES •Leadlessultrasmallplasticpackage(1mm×0.6mm×0.5mm) •Boardspace1.3×0.9mm •PowerdissipationcomparabletoSOT23.

BC857QAS

45V,100mAPNP/PNPgeneral-purposetransistor

Generaldescription PNP/PNPgeneral-purposetransistorinaleadlessultrasmallDFN1010B-6(SOT1216)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:BC847QAS. NPN/PNPcomplement:BC847QAPN. Featuresandbenefits •Reducescomponentcount •Reducespickandplacecosts •A

BC857RA

45V,100mAPNP/PNPgeneral-purposedoubletransistors

BC857S

SurfacemountSi-EpitaxialPlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarDouble-Transistors •Powerdissipation300mW •PlasticcaseSOT-363 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC857S

PNPSiliconAFTransistorArray

PNPSiliconAFTransistorArrays •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedtransistorwithgoodmatchinginonepackage •BC856S/U,BC857S:Fororientationinreelseepackageinformation

BC857S

PNPSiliconAFTransistorArray(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

PNPSiliconAFTransistorArray •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedTransistorswithhighmatchinginonepackage

BC857S

PNPMulti-ChipGeneralPurposeAmplifier

PNPMulti-ChipGeneralPurposeAmplifier Thisdeviceisdesignedforgeneralpurposeamplifierapplicationsatcollectorcurrentsto200mA.SourcedfromProcess68.

BC857S

SurfaceMountGeneralPurposeSi-Epi-PlanarDouble-Transistors

BC857S

PNPSiliconAFTransistorArrays

BC857S

Multi-ChipTransistor

Features PowerdissipationPCM:0.3W(Tamp.=25°C) CollectorcurrentICM:-0.2A Collector-basevoltageV(BR)CBO:-50V Operating&StoragejunctionTemperatureTj,Tstg:-55°C~+150°C