BC857CW

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC857CW

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryNPNTypesAvailable(BC846AW–BC848CW) •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101

BC857CW

PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC847W,BC848W,BC849W,BC850W(NPN)

BC857CW

PNPGeneralPurposeTransistor

■Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications

BC857CW

PNPGeneralPurposeTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •IdeallySuitedforAutomaticInsertion •ComplementaryPNPSiliconTypesAvailable •ForSwitchingandAFAmplifierApplications •EpoxymeetsUL94V-0flammabilityrating •MoisureS

BC857CW

BC856AW

FEATURES *Ideallysuitedforautomaticinsertion *ForSwitchingandAFAmplifierApplications *OperatingTemp.:-55°C~+150°C

BC857CW

SURFACEMOUNTPNPSILICONTRANSISTOR

BC857CW

PNPSiliconAFTransistor

BC857CW

Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES •Ideallysuitedforautomaticinsertion •ForSwitchingandAFAmplifierApplications

BC857CW

PNPSiliconAFTransistor

PNPSiliconAFTransistor •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30hzand15kHz •Complementarytypes: BC847...-BC850...(NPN) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)