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BC857BDW

丝印:3B;Package:SOT-363;Plastic-Encapsulate Transistors

FEATURES Two transistors in one package Reduces number of components and board space No mutual interference between the transistors

文件:532.51 Kbytes 页数:3 Pages

GWSEMI

唯圣电子

BC857BDW1T1

Dual General Purpose Transistors(PNP Duals)

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

文件:164.15 Kbytes 页数:5 Pages

LRC

乐山无线电

BC857BDW1T1

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

文件:469.23 Kbytes 页数:5 Pages

ETL

亚历电子

BC857BDW1T1

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC856BDW1T1 = 3B BC857BDW1T1 = 3F BC857CDW1T1 = 3G

文件:106.29 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

BC857BDW1T1G

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compli

文件:178.77 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

BC857BDW1T1G-TP

Dual PNP Small Signal Surface Mount Transistor

Features Epitaxial planar die construction © Utra-small surface mount package

文件:1.29464 Mbytes 页数:4 Pages

TECHPUBLIC

台舟电子

BC857BDW

Dual General Purpose Transistors

文件:940.15 Kbytes 页数:6 Pages

YEASHIN

亚昕科技

BC857BDW1T1G

Dual General Purpose Transistors

文件:123.82 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

BC857BDW1T1G

Dual General Purpose Transistors

文件:88.63 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

BC857BD

TRANSISTOR

AiT-Semi

创瑞科技

技术参数

  • ICEO(V):

    45.00

  • HFE Min/Max:

    220/475

  • IC(mA)/VCE:

    2/5

  • VCE(sat)Max(Volts):

    0.65

  • VCE(sat)IC/Ib(mA):

    100/5

  • FtTYP(MHz):

    100

  • Polarity:

    F

  • Package:

    SC-88

供应商型号品牌批号封装库存备注价格
ONSEMI/安森美
25+
SOT363
32360
ONSEMI/安森美全新特价BC857BDW1T1G即刻询购立享优惠#长期有货
询价
ON
24+
SOT363
23000
全新原装现货,量大特价,原厂正规渠道!
询价
ON/安森美
2038+
SOT-363
8000
原装正品假一罚十
询价
ON
23+
SOT363
6000
正规渠道,只有原装!
询价
ON/安森美
20+
SOT-363
120000
原装正品 可含税交易
询价
ON/安森美
2021+
NA
9000
原装现货,随时欢迎询价
询价
ON/安森美
2024
SOT-363
19545
全新原装正品,现货销售
询价
ON/安森美
20+
NA
81000
询价
ON(安森美)
23+
SC-70-6(SOT-363)
11223
公司只做原装正品,假一赔十
询价
ON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
更多BC857BD供应商 更新时间2026-1-20 14:14:00