Power dissipation, plastic case, Weight approx

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 300 mW • Plastic case SOT-363 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：488.12 Kbytes 页数：2 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：5F；Package：TSSOP6；65 V, 100 mA PNP/PNP general-purpose transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors

文件：241.71 Kbytes 页数：11 Pages

NEXPERIA

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PNP Silicon AF Transistor Arrays

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Infineon

英飞凌

丝印：3Ds；Package：SOT363；PNP Silicon AF Transistor Arrays

文件：854.75 Kbytes 页数：10 Pages

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文件：108.83 Kbytes 页数：2 Pages

Diotec

德欧泰克

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Diotec

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文件：180.47 Kbytes 页数：2 Pages

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Dual Digital Transistors (PNPPNP)

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TECHPUBLIC

台舟电子

丝印：7F；Package：TSSOP6；65 V, 100 mA PNP/PNP general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C

文件：233.74 Kbytes 页数：10 Pages

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丝印：7F；Package：TSSOP6；65 V, 100 mA PNP/PNP general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C • Qualified according to A

文件：234.85 Kbytes 页数：10 Pages

NEXPERIA

安世