首页 >BC856CCNA>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PNPEpitaxialSiliconTransistor Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNPSmallSignalTransistor310mW | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
PNPgeneralpurposetransistors DESCRIPTION PNPtransistorencapsulatedinanultrasmallSC-89(SOT490)plasticSMDpackage. NPNcomplements:BC846F,BC847FandBC848Fseries. FEATURES •PowerdissipationcomparabletoSOT23 •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitching | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
PNPSiliconTransistor | AUK AUK corp | AUK | ||
GeneralpurposeapplicationSwitchingapplication Descriptions •Generalpurposeapplication •Switchingapplication Features •Highvoltage:VCEO=-55V •ComplementarypairwithBC846F | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
PNPSiliconTransistor(GeneralpurposeapplicationSwitchingapplication) Descriptions •Generalpurposeapplication •Switchingapplication Features •Highvoltage:VCEO=-55V •ComplementarypairwithBC846F | AUK AUK corp | AUK | ||
SiliconPNPtransistorinaSOT-23PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
GeneralPurposeTransistor GeneralPurposeTransistor RoHSDevice HalogenFree Features -Ideallysuitedforautomaticinsertion -Powerdissipation PCM:0.25W(@TA=25°C) -Lowcurrent.(max.100mA) -Collector-basevoltage VCBO:BC856=-80V BC857=-50V BC858=-30V | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
65V,100mANPNgeneral-purposetransistors Featuresandbenefits •General-purposetransistors •SMDplasticpackages •Twodifferentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
PNPSiliconAFTransistorArray PNPSiliconAFTransistorArrays •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedtransistorwithgoodmatchinginonepackage •BC856S/U,BC857S:Fororientationinreelseepackageinformation | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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