丝印：2E；Package：TSSOP6；65 V, 100 mA PNP/PNP general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C • Qualified according to A

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安世安世半导体(中国)有限公司

65 V, 100 mA PNP/PNP general-purpose double transistor

PNP/PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: BC846BSH-Q\n NPN/PNP complement: BC846BPNH-Q • Low collector capacitance\n• Low collector-emitter saturation voltage\n• Closely matched current gain\n• Reduces number of components and board space\n• No mutual interference between the transistors\n• High-temperature applications up to 175 °C\n• Qualified according to AEC-Q101 and recommended f;

Nexperia

安世

PNP general purpose transistors

DESCRIPTION PNP transistor in an SC-75 plastic package. NPN complements: BC846T and BC847T. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification especially in portable equipment.

文件：46.99 Kbytes 页数：8 Pages

PHI

飞利浦

SURFACE MOUNT PNP SILICON TRANSISTOR

文件：350.66 Kbytes 页数：2 Pages

Central