Small Signal Transistor

Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: -0.1A -Collector-base voltage VCBO: BC856W= -80V BC857W= -50V BC858W= -30V -Operating and

文件：151.3 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：3A；Package：SOT323；65 V, 100 mA PNP general-purpose transistors

1. General description PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia JEDEC NPN complement BC856W-Q BC846W-Q BC856AW-Q BC846AW-Q BC856BW-Q BC846BW-Q BC857W-Q BC847W-Q BC

文件：229.32 Kbytes 页数：13 Pages

NEXPERIA

安世

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

文件：178.5 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

文件：217.99 Kbytes 页数：5 Pages

LRC

乐山无线电

CASE 419-02, STYLE 3 SOT-323/SC-70

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

文件：251.43 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

General Purpose Transistors

文件：154.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

General Purpose Transistors

文件：154.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

General Purpose Transistors

文件：154.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

250mW, PNP Small Signal Transistor

文件：265.41 Kbytes 页数：4 Pages

TSC

台湾半导体

250mW, PNP Small Signal Transistor

文件：265.41 Kbytes 页数：4 Pages

TSC

台湾半导体