BC856-Q

65 V, 100 mA NPN general-purpose transistors

Featuresandbenefits •General-purposetransistors •SMDplasticpackages •Twodifferentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

BC856-QR

Package：TO-236-3，SC-59，SOT-23-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 65V 0.1A TO236AB

Nexperia USA Inc.

BC856S

PNPSiliconAFTransistorArray

PNPSiliconAFTransistorArrays •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedtransistorwithgoodmatchinginonepackage •BC856S/U,BC857S:Fororientationinreelseepackageinformation

BC856S

SurfacemountSi-EpitaxialPlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarDouble-Transistors •Powerdissipation300mW •PlasticcaseSOT-363 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC856S

PNPSiliconAFTransistorArray(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedTransistorswithhighmatchinginonepackage

BC856S

PNPgeneralpurposedoubletransistor

DESCRIPTION PNPdoubletransistorinanSC-88(SOT363)plasticsixleadpackage. FEATURES •Twotransistorsinonepackage •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors. APPLICATIONS •Generalpurposeswitchingandsmal

BC856S

SurfaceMountGeneralPurposeSi-Epi-PlanarDouble-Transistors

BC856S

PNPGeneralPurposeDoubleTransistor

Features •Twotransistorsinonepackage •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors.

BC856S

65V,100mAPNP/PNPgeneral-purposetransistor

Generaldescription PNP/PNPgeneral-purposetransistorpairinaverysmallSOT363(SC-88)Surface-MountedDevice(SMD)plasticpackage. Features Lowcollectorcapacitance Lowcollector-emittersaturationvoltage Closelymatchedcurrentgain Reducesnumberofcomponentsand

BC856S

PNPSiliconAFTransistorArrays