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BC850C

SMDGeneralPurposeNPNTransistors

DiotecDIOTEC

德欧泰克

BC850C

NPNTransistors

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

BC850C

SMDNPNTransistor

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V,MachineModel:>400V •Epitaxialplanachipconstruction •Idealformediumpowerapplicationandswitching •Ascomplementarytype,thePNPtransistor

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

BC850C

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

BC850C

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage. PNPcomplements:BC859andBC860. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BC850C

NPNGeneralPurposeTransistors

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●PNPcomplements:BC859andBC860.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

BC850C

NPNGENERALPURPOSETRANSISTORS

FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BC850C

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon *MoistureSensitivityLevel:1 *ESDRating-HumanBodyModel:>4000V -MachineModel:>400V

WEITRONWEITRON

威堂電子科技

BC850C

SurfacemountSi-EpitaxialPlanarTransistors

GeneralPurposeTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

BC850C

NPNSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes: BC856...-BC860...(PNP) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC850C

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

BC850C

NPNSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgain)

NPNSiliconAFTransistors Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856,BC857,BC859,BC860(PNP)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BC850CMTF

NPNEpitaxialSiliconTransistor

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC849,BC850 •ComplementtoBC856...BC860

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BC850CT

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes: BC856T,BC857T, BC858T,BC859T,BC860T

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC850CW

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BC850CW

NPNSiliconAFTransistor(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BC850CW

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC850CW

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

BC850CW

NPNGENERALPURPOSETRANSISTORS

FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •BothnormalandPbfreeproductareavailable: Normal:80~95Sn,5~20Pb Pbfree:98.5Snabove

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BC850CW

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

详细参数

  • 型号:

    BC850BT/R

  • 功能描述:

    TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 100MA I(C) | TO-236AA

供应商型号品牌批号封装库存备注价格
SAMSUNG
2008++
SOT-23
27130
新进库存/原装
询价
SAMSANG
19+
SOT-23
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
SAMSUNG/三星
SOT-23
265209
假一罚十原包原标签常备现货!
询价
SAMSUNG/三星
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
SAMSUNG/三星
2022
SOT-23
80000
原装现货,OEM渠道,欢迎咨询
询价
SAMSUNG/三星
SOT-23
20930
优势代理渠道,原装正品,可全系列订货开增值税票
询价
SAMSUNG/三星
24+23+
SOT-23
12580
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
SAMSUNG/三星
23+
SOT-23
98000
询价
SAMSUNG/三星
23+
NA/
20930
优势代理渠道,原装正品,可全系列订货开增值税票
询价
SAMSUNG-三星
24+25+/26+27+
SOT-23.贴片
18800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
更多BC850BT/R供应商 更新时间2024-6-6 16:30:00