FZT849

SOT223NPNSILICONPLANARHIGHCURRENT

FEATURES *Extremelylowequivalenton-resistance;RCE(sat)36mΩat5A *7Ampcontinuouscollectorcurrent(20Amppeak) *Verylowsaturationvoltages *Excellentgaincharateristicsspecifiedupto20Amp *Ptot=3Watts

FZT849TA

SOT223NPNSILICONPLANARHIGHCURRENT(HIGHPERFORMANCE)TRANSISTOR

INA849

INA849Ultra-Low-Noise(1nV/?숰z),High-Bandwidth,InstrumentationAmplifier

INA849

INA849Ultra-Low-Noise(1nV/?숰z),High-Bandwidth,InstrumentationAmplifier

INA849

INA851Precision,Low-Noise,FullyDifferentialOutputInstrumentationAmplifierWithOptionalAttenuatingGain

INA849

INA823Precision,Low-Power,Wide-Supply(2.7-Vto36-V)InstrumentationAmplifier

INA849

INA849Ultra-Low-Noise(1nV/?숰z),High-Bandwidth,InstrumentationAmplifier

INA849

INA851Precision,Low-Noise,FullyDifferentialOutputInstrumentationAmplifierWithAttenuatingGainandOutputClamping

1Features •Gainprogrammablefrom G=0.2to10,000byusingexternalresistor •Fullydifferentialoutputswithintegratedclamping •Lowoffsetvoltage:10μV(typ),35μV(max) •Lowoffsetdrift:0.1μV/°C(typ),0.3μV/°C(max) •Lowinputbiascurrent:5nA(typ) •Inputstagenoise

INA849

PGA855Low-Noise,Wide-Bandwidth,FullyDifferentialOutputProgrammable-GainInstrumentationAmplifier

1Features •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:2ppm/°C(max) •Fullydifferentialoutputs –Independentoutputpower-supplypins –Outputcommon-modecontrol •Fastersignalprocessing: –Widebandwidth:10MHzatallgains

INA849

PGA855Low-Noise,Wide-Bandwidth,FullyDifferentialOutputProgrammable-GainInstrumentationAmplifier

1Features •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:1ppm/°C(max)atG=1V/V •Fullydifferentialoutputs –Independentoutputpower-supplypinstoallow forADCinputoverdriveprotection –Outputcommon-modecontrol •Faster