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BC849CW

NPNSiliconAFTransistor(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

BC849CW

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BC849CW

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BC849CW

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDiotec Semiconductor

德欧泰克

BC849CW

NPNGENERALPURPOSETRANSISTORS

FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •BothnormalandPbfreeproductareavailable: Normal:80~95Sn,5~20Pb Pbfree:98.5Snabove

PANJITPan Jit International Inc.

強茂強茂股份有限公司

BC849CW

NPNSiliconAFTransistors

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BC849CW

NPNTransistor

FEATURES -Lowreversecurrent,highreliability -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free)

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

BC849CW

NPNTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

BC849CW

SMDGeneralPurposeNPNTransistors

DiotecDiotec Semiconductor

德欧泰克

BC849CW

SMDGeneralPurposeNPNTransistors

DiotecDiotec Semiconductor

德欧泰克

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