BC848CW-G

SmallSignalTransistor

Features -Powerdissipation PCM:0.15W(@TA=25°C) -Collectorcurrent ICM:0.1A -Collector-basevoltage VCBO:BC846W=80V BC847W=50V BC848W=30V

BC848CW-G

SmallSignalTransistor

Features -Powerdissipation PCM:0.15W(@TA=25°C) -Collectorcurrent ICM:0.1A -Collector-basevoltage VCBO:BC846W=80V BC847W=50V BC848W=30V

BC848CWQ

NPNGeneralPurposeAmplifier

BC848CW-TP

NPNGeneralPurposeTransistors

Features •Lowcurrent(max.100mA) •Lowvoltage(max.65V) •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1

BC848F

NPNSiliconTransistor

BC848F

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorencapsulatedinanultrasmallSC-89(SOT490)plasticSMDpackage. PNPcomplements:BC856F,BC857FandBC858Fseries. FEATURES •PowerdissipationcomparabletoSOT23 •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitching

BC848F

NPNSiliconTransistor(GeneralpurposeapplicationSwitchingapplication)

Descriptions •Generalpurposeapplication •Switchingapplication Features •Highvoltage:VCEO=30V •ComplementarypairwithBC858F

BC848S

SurfaceMountGeneralPurposeSi-Epi-PlanarDouble-Transistors

BC848S

SurfacemountSi-EpitaxialPlanarTransistors

Features Twotransistorsinonepackage GeneralPurpose ComplianttoRoHS,REACH,ConflictMinerals1) TypicalApplications Signalprocessing,Switching,Amplification Commercialgrade1) MechanicalData1) Tapedandreeled3000/7“ Weightapprox.0.01g Case

BC848S

DUALTRANSISTOR(NPNNPN)