NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC857...-BC860...(PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

文件：881.87 Kbytes 页数：13 Pages

Infineon

英飞凌

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 0.1A SOT-23

Infineon

英飞凌

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 0.1A SOT-23

Infineon

英飞凌

NPN Silicon AF Transistors

文件：183.85 Kbytes 页数：19 Pages

Infineon

英飞凌

NPN general purpose transistors

DESCRIPTION NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complements: BC856F, BC857F and BC858F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

文件：51.75 Kbytes 页数：8 Pages

PHI

PHI

Small Signal Transistor

Features - Power dissipation PCM: 0.20W (@TA=25 °C) - Collector current ICM: 0.1A - Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V - Operating and storage junction temperature range: TJ, TSTG= -65 to +150 °C

文件：156.63 Kbytes 页数：5 Pages

COMCHIP

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