BC848

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypesAvailable(BC856-BC858) •ForSwitchingandAFAmplifierApplications •LeadFree/RoHSCompliant(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability

BC848

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description DesignedforswitchingandAFamplifieramplificationsuitableforautomaticinsertioninthickandthin-filmcircuits.

BC848

NPN General Purpose Transistor

■Features ●Ideallysuitedforautomaticinsertion ●ForswitchingandAFamplifierapplications

BC848

NPN Silicon Epitaxial Transistor

NPNSiliconEpitaxialTransistor forswitchingandamplifierapplications AscomplementarytypesthePNPtransistors BC856...BC860isrecommended.

BC848

NPN general purpose Transistor

FEATURES •Highcurrentgain. •ExcellenthFElinearity. •Lownoisebetween30Hzand15kHz. •ForAFinputstagesanddriverapplications. APPLICATIONS •Generalpurposeswitchingandamplification.

BC848

NPN Epitaxial Silicon Transistor

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC849,BC850 •ComplementtoBC856...BC860

BC848

Surface Mount General Purpose Si-Epi-Planar Transistors

•Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC848

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications

BC848

NPN SILICON TRANSISTOR

Features ●Powerdissipation PCM:0.3W(Tamb=25°C) ●PluseDrain ICM:0.1mA ●ReverseVoltage V(BR)CBO:BC84680V BC84750V BC84830V ●Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55°Cto+150°C

BC848

NPN GENERAL PURPOSE TRANSISTORS

VOLTAGE30/45/65VoltsCURRENT225mWatts FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •IncompliancewithEURoHS2002/95/ECdirectives