BC847CQC-Q

45V,100mANPNgeneral-purposetransistor

Featuresandbenefits •Highpowerdissipationcapability •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotivea

BC847CRF

250mW,NPNSmallSignalTransistor

BC847CRFG

250mW,NPNSmallSignalTransistor

BC847CS

GENERALPURPOSETRANSISTORS

FEATURES •GeneralPurposeAmplifierApplications •CollectorCurrentIC=-100mA •IncompliancewithEURoHS2002/95/ECdirectives

BC847CS

NPNPlasticEncapsulateTransistor

FEATURES •Ideallysuitedforautomaticinsertion •ForSwitchingandAFAmplifierApplications

BC847CT

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinanSC-75plasticpackage. PNPcomplements:BC856TandBC857T. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification,especially inportablecommunicationequipment •Electronicdataproce

BC847CT

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •BVCEO>45V •IC=100mACollectorCurrent •EpitaxialPlanarDieConstruction •Ultra-SmallSurfaceMountPackage •ComplementaryPNPType:MMBT3906T •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifie

BC847CT

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes: BC856T,BC857T, BC858T,BC859T,BC860T

BC847CT

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon p/bLead(Pb)-Free

BC847CT

45V,100mANPNgeneral-purposetransistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.