BC847BVNQ

COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •EpitaxialDieConstruction •TwoInternallyIsolatedNPN/PNPTransistorsinOnePackage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Halogen-andAntimony-Free.“Green”Device(Note3) •TheBC847BVNQaresuitableforautomotiveap

BC847BVNQ-7

Marking：KAW；Package：SOT563；COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •EpitaxialDieConstruction •TwoInternallyIsolatedNPN/PNPTransistorsinOnePackage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Halogen-andAntimony-Free.“Green”Device(Note3) •TheBC847BVNQaresuitableforautomotiveap

BC847BVNQ-7

COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR

BC847BV-TP

NPNPlastic-EncapsulateTransistors

Features •EpitaxialDieConstruction •ComplementaryPNPTypeAvailable(BC857BV) •Ultra-smallSurfaceMountPackage •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •

BC847BW

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSC70;SOT323plasticpackage. PNPcomplements:BC856WandBC857W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.

BC847BW

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP)

BC847BW

NPNSiliconAFTransistor(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

BC847BW

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon PbLead(Pb)-Free

BC847BW

45V,100mANPNgeneral-purposetransistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.

BC847BW

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR