BC847AW-QX

Package：SC-70，SOT-323；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 45V 0.1A SOT323

Nexperia USA Inc.

BC847AW-TP

NPNGeneralPurposeTransistors

Features •Lowcurrent(max.100mA) •Lowvoltage(max.65V) •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1

BC847B

NPNSmallSignalTransistor310mW

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •PowerDissipation:0.225W(Tamb=25°C)(Note1) •CollectorCurrent:0.1A •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1

BC847B

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypes:BC856–BC858 •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101StandardsforH

BC847B

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •EpitaxialDieConstruction •IdeallySuitedforAutomaticInsertion •310mWPowerDissipation •ComplementaryPNPTypesAvailable(BC856-BC858) •ForSwitchingandAFAmplifierApplications

BC847B

NPNGeneralPurposeTransistor

Features 1)BVCEO

BC847B

NPNSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgain)

NPNSiliconAFTransistors Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856,BC857,BC859,BC860(PNP)

BC847B

NPNGeneralPurposeAmplifier

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC849,BC850 •ComplementtoBC856...BC860

BC847B

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •BVCEO>45V •IC=100mACollectorCurrent •EpitaxialPlanarDieConstruction •Ultra-SmallSurfaceMountPackage •ComplementaryPNPType:MMBT3906T •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifie

BC847B

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.