BC847-Q

Marking：1H；Package：TO-236A；45 V, 100 mA NPN general-purpose transistors

Featuresandbenefits •General-purposetransistors •SMDplasticpackages •Threedifferentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

BC847-QR

Package：TO-236-3，SC-59，SOT-23-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 45V 0.1A TO236AB

Nexperia USA Inc.

BC847RA

45V,100mANPN/NPNgeneral-purposedoubletransistors

BC847RAPN

45V,100mANPN/PNPgeneral-purposedoubletransistors

BC847S

NPNMulti-ChipGeneralPurposeAmplifier

NPNMulti-ChipGeneralPurposeAmplifier Thisdeviceisdesignedforgeneralpurposeamplifierapplicationsatcollectorcurrentsto200mA.SourcedfromProcess07.

BC847S

SurfacemountSi-EpitaxialPlanarTransistors

Features Twotransistorsinonepackage GeneralPurpose ComplianttoRoHS,REACH,ConflictMinerals1) TypicalApplications Signalprocessing,Switching,Amplification Commercialgrade1) MechanicalData1) Tapedandreeled3000/7“ Weightapprox.0.01g Case

BC847S

NPNSiliconAFTransistorArray

NPNSiliconAFTransistorArrays •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedtransistors withgoodmatchinginonepackage •BC846S/U,BC847S:Fororientationinreelsee packageinfo

BC847S

NPNSiliconAFTransistorArray(ForAFinputstagesanddriverapplicationsHighcurrentgain)

NPNSiliconAFTransistorArray •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedTransistorswithhighmatchinginonepackage

BC847S

NPNNPNPlastic-EncapsulateTransistors

Features Highcurrentgain Excellenthrelinearity Lownoise

BC847S

SurfaceMountGeneralPurposeSi-Epi-PlanarDouble-Transistors