BC846B

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.

BC846B

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon

BC846B

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon *MoistureSensitivityLevel:1 *ESDRating-HumanBodyModel:>4000V -MachineModel:>400V

BC846B

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypesAvailable(BC856-BC858) •ForSwitchingandAFAmplifierApplications •LeadFree/RoHSCompliant(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability

BC846B

NPNgeneralpurposeTransistor

FEATURES •Highcurrentgain. •ExcellenthFElinearity. •Lownoisebetween30Hzand15kHz. •ForAFinputstagesanddriverapplications. APPLICATIONS •Generalpurposeswitchingandamplification.

BC846B

0.2WattsNPNPlastic-EncapsulateTransistors

Features ♦Epitaxialplanardieconstruction ♦Surfacedevicetypemounting ♦Moisturesensitivitylevel1 ♦MatteTin(Sn)leadfinishwithNickel(Ni)underplate ♦PbfreeversionandRoHScompliant ♦Greencompound(Halogenfree)withsuffixGonpackingcodeandprefixGondat

BC846B

NPNGENERALPURPOSETRANSISTORS

FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest

BC846B

NPNGeneralPurposeTransistor

■Features ●Ideallysuitedforautomaticinsertion ●ForswitchingandAFamplifierapplications

BC846B

SMDGeneralPurposeTransistor(NPN)

Features •NPNSiliconEpitaxialPlanarTransistorforSwitchingandAmplifierApplications

BC846B

SOT-23BIPOLARTRANSISTORSTRANSISTOR(NPN)