200mW, PNP Small Signal Transistor

文件：158.87 Kbytes 页数：6 Pages

TSC

台湾半导体

General Purpose NPN Transistor

文件：68.31 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

General Purpose NPN Transistor

文件：69.57 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Epitaxial Planar Die Construction • Complementary PNP Types: BC807-xxW • For switching and AF Amplifier Applications • Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) • Halogen and Antimony Free. Green Device (Note 3) • Quali

文件：364.41 Kbytes 页数：3 Pages

DIODES

美台半导体

200mW, NPN Small Signal Transistor

FEATURES AEC-Q101 qualified High current Low power loss, high efficiency Ideal for automated placement Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free APPLICATIONS General switching and amplification

文件：466.84 Kbytes 页数：5 Pages

TSC

台湾半导体

45 V, 500 mA PNP general-purpose transistors

Features and benefits • High current • Three current gain selections • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：308.26 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：6C；Package：SOT323；45 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • Three current gain selections • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：310.97 Kbytes 页数：14 Pages

NEXPERIA

安世

200mW, NPN Small Signal Transistor

Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) with suffix G on packing code and prefix G on date code

文件：576.91 Kbytes 页数：4 Pages

TSC

台湾半导体

200mW, NPN Small Signal Transistor

Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) with suffix G on packing code and prefix G on date code

文件：576.91 Kbytes 页数：4 Pages

TSC

台湾半导体

General Purpose NPN Transistor

文件：68.31 Kbytes 页数：5 Pages

ONSEMI

安森美半导体