BC817-16QC-Q

45V,500mANPNgeneral-purposetransistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto

BC817-16RF

300mW,NPNSmallSignalTransistor

FEATURES -Lowpowerloss,highcurrentcapability,lowVF -Surfacemountdevicetype -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeandRoHScomplian -PackingcodewithsuffixGmeans greencompound(halogen-free)

BC817-16RFG

300mW,NPNSmallSignalTransistor

BC817-16-TP

NPNSmallSignalTransistor310mW

BC817-16W

200mW,PNPSmallSignalTransistor

BC817-16W

200mW,NPNSmallSignalTransistor

Features ◇Epitaxialplanardieconstruction ◇Surfacedevicetypemounting ◇Moisturesensitivitylevel1 ◇MatteTin(Sn)leadfinishwithNickel(Ni)underplate ◇PbfreeversionandRoHScompliant ◇Greencompound(Halogenfree)withsuffixGonpackingcodeandprefixGondatecode

BC817-16W

NPNgeneralpurposetransistor

FEATURES ●Highcollectorcurrent. ●Highcurrentgain. ●Lowcollector-emittersaturationvoltage. ●Complementarytypes:BC807W,BC808W. APPLICATIONS ●Generalpurposeswitchingandamplificationapplication.

BC817-16W

NPNSiliconGeneralPurposeTransistors

Features •Capableof0.2WattsofPowerDissipation. •Collector-current0.5A •ThermalResistanceFromJunctionToAmbient:625OC/W •Operatingandstoragejunctiontemperaturerange:-55OCto+150OC •LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformati

BC817-16W

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •EpitaxialPlanarDieConstruction •ComplementaryPNPTypes:BC807-xxW •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHSCompliant(Note1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •Quali

BC817-16W

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC807W,BC808W(PNP)