NPN EPITAXIAL SILICON TRANSISTOR

Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/ BC808

文件：31.84 Kbytes 页数：2 Pages

Fairchild

仙童半导体

丝印：6D*；Package：SOT-23；NPN general purpose transistor

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: BC807. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

文件：47.28 Kbytes 页数：8 Pages

PHI

PHI

NPN Silicon AF Transistors

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807, BC808 (PNP)

文件：47.67 Kbytes 页数：5 Pages

Infineon

英飞凌

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

文件：79.57 Kbytes 页数：4 Pages

UTC

友顺

EPITAXAIL PLANAR NPN TRANSISTOR(for General Purpose, Switching)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BC807.

文件：203.82 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

NPN Silicon Transistor (High current application Switching application)

Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary pair with BC807

文件：81.12 Kbytes 页数：3 Pages

AUK

SILICON PLANAR EPITAXIAL TRANSISTORS

SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors

文件：204.04 Kbytes 页数：3 Pages

CDIL

SURFACE MOUNT SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR BC817 and BC818 series devices are silicon NPN transistors, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications.

文件：337.81 Kbytes 页数：2 Pages

Central

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features ● Ideally Suited for Automatic Insertion ● Epitaxial Planar Die Construction ● For Switching, AF Driver and Amplifier Applications ● Complementary PNP Types Available (BC807)

文件：57.97 Kbytes 页数：3 Pages

DIODES

美台半导体

Surface mount Si-Epitaxial PlanarTransistors

• Power dissipation 310 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：188.12 Kbytes 页数：2 Pages

Diotec

德欧泰克