丝印：9M；Package：DFN1412D-3；45 V, 500 mA NPN general-purpose transistors

Features and benefits • High power dissipation capability • High current • Three current gain selections • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm • Qualified according to

文件：334.75 Kbytes 页数：14 Pages

NEXPERIA

安世

45 V, 500 mA PNP general-purpose transistors

Features and benefits • High power dissipation capability • High current • Three current gain selections • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm • Qualified according to

文件：332.46 Kbytes 页数：14 Pages

NEXPERIA

安世

300mW, NPN Small Signal Transistor

FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS complian - Packing code with suffix G means green compound (halogen-free)

文件：81.13 Kbytes 页数：2 Pages

TSC

台湾半导体

200mW, NPN Small Signal Transistor

Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) with suffix G on packing code and prefix G on date code

文件：576.91 Kbytes 页数：4 Pages

TSC

台湾半导体

NPN general purpose transistor

FEATURES ● High collector current. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BC807W,BC808W. APPLICATIONS ● General purpose switching and amplification application.

文件：225.5 Kbytes 页数：5 Pages

BILIN

银河微电

45 V, 500 mA PNP general-purpose transistors

Features and benefits • High current • Three current gain selections

文件：316.5 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：6A*；Package：SOT-323；NPN general purpose transistor

DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complement: BC807W. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

文件：49.62 Kbytes 页数：8 Pages

PHI

PHI

NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807W, BC808W (PNP)

文件：47.5 Kbytes 页数：5 Pages

Infineon

英飞凌

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Epitaxial Planar Die Construction • Complementary PNP Types: BC807-xxW • For switching and AF Amplifier Applications • Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) • Halogen and Antimony Free. Green Device (Note 3) • Quali

文件：364.41 Kbytes 页数：3 Pages

DIODES

美台半导体

NPN Silicon General Purpose Transistors

Features • Capable of 0.2Watts of Power Dissipation. • Collector-current 0.5A • Thermal Resistance From Junction To Ambient:625 OC/W • Operating and storage junction temperature range: -55OC to +150OC • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering informati

文件：365.13 Kbytes 页数：2 Pages

MCC