丝印：AR；Package：HUSON3；20 V, 2 A NPN medium power transistors

Features and benefits  High current  Two current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：2.12979 Mbytes 页数：23 Pages

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20 V, 2 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.11315 Mbytes 页数：24 Pages

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20 V, 2 A NPN medium power transistors

文件：1.18878 Mbytes 页数：23 Pages

PHI

飞利浦

丝印：AR；Package：DFN2020-3；20 V, 2 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Two current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Leadless very small SMD plastic package with medium power capability • Qualified accor

文件：247.28 Kbytes 页数：13 Pages

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20 V, 2 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Two current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Leadless very small SMD plastic package with medium power capability • Qualified accor

文件：247.28 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：BY；Package：DFN2020D-3；20 V, 2 A NPN medium power transistors

Features and benefits * High collector current capability IC and ICM * Two current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical conduc

文件：3.0544 Mbytes 页数：13 Pages

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20 V, 2 A NPN medium power transistors

Features and benefits * High collector current capability IC and ICM * Two current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical conduc

文件：3.0544 Mbytes 页数：13 Pages

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安世

丝印：BY；Package：DFN2020D-3；20 V, 2 A NPN medium power transistors

文件：762.73 Kbytes 页数：14 Pages

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20 V, 2 A NPN medium power transistor

NPN medium power transistor in a SOT1061 leadless very small Surface-Mounted Device (SMD) plastic package. PNP complement: BC69PA. • High current\n• Two current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• Leadless very small SMD plastic package with medium power capability\n• AEC-Q101 qualified;

Nexperia

安世

20 V, 2 A NPN medium power transistors

NPN medium power transistor in a SOT1061 (DFN2020-3) leadless very small Surface-Mounted Device (SMD) plastic package. • High collector current capability IC and ICM\n• High power dissipation capability\n• Leadless very small SMD plastic package with medium power capability\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世