BCP68-25

20V,2ANPNmediumpowertransistors

Featuresandbenefits Highcurrent Twocurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCP68-25-Q

20V,2ANPNmediumpowertransistors

1.Generaldescription NPNmediumpowertransistorsinamediumpowerSOT223(SC-73)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Twocurrentgainselections •Highpowerdissipationcapability •Qualifiedaccordin

BCX68-25

ForgeneralAFapplications

BCX68-25

NPNSiliconAFTransistors(ForgeneralAFapplicationsHighcollectorcurrent)

NPNSiliconAFTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCX69(PNP)

BCX68-25

NPNSiliconAFTransistors

NPNSiliconAFTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BCX69(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

BCX68-25

NPNSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *Highgainandlowsaturationvoltages COMPLEMENTARYTYPE–BCX69 PARTMARKINGDETAIL– BCX68–CE BCX68-16–CC BCX68-25–CD

DCX68-25

NPNSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DCX69) •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)