80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • Reduced Printed-Circuit Board (PCB) area requirements • Leadless small SMD plastic package with solderable side pads • Exposed heat sink for excellent thermal and electrical conductivity •

文件：268.81 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：F5；Package：DFN2020D-3；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • Reduced Printed-Circuit Board (PCB) area requirements • Leadless small SMD plastic package with solderable side pads • Exposed heat sink for excellent thermal and electrical conductivity •

文件：265.7 Kbytes 页数：12 Pages

NEXPERIA

安世

Medium power transistors

NPN medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and Side-Wettable Flanks (SWF).\n Table 1. Product overview Type number\n Package\n PNP complement\n BC56PAST-Q\n DFN2020D-3

Nexperia

安世

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE(sat)

文件：42.76 Kbytes 页数：1 Pages

Zetex

NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complements: BCP51, BCP52 and BCP53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Switching.

文件：43.44 Kbytes 页数：8 Pages

PHI

飞利浦

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●For AF driver and output stages ●High collector current ●Low collector-emitter saturation voltage ●Complementary types: BCP 51 … BCP 53 (PNP)

文件：131.42 Kbytes 页数：5 Pages

SIEMENS

西门子