丝印：BK；Package：HUSON3；80 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.74382 Mbytes 页数：22 Pages

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丝印：BK；Package：SOT1061；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Leadless very small SMD plastic package with medium power capability • AEC-Q101 qual

文件：250.88 Kbytes 页数：13 Pages

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丝印：BK；Package：SOT1061；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Leadless very small SMD plastic package with medium power capability • Qualified acc

文件：250.07 Kbytes 页数：13 Pages

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丝印：CL；Package：SOT1061D；45V/60V/80V, 1A NPN medium power transistors

Features and benefits * High collector current capability IC and ICM * Three current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical cond

文件：1.40185 Mbytes 页数：14 Pages

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丝印：F6；Package：SOT1061D；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • Reduced Printed-Circuit Board (PCB) area requirements • Leadless small SMD plastic package with solderable side pads • Exposed heat sink for excellent thermal and electrical conductivity •

文件：263.29 Kbytes 页数：12 Pages

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80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • Reduced Printed-Circuit Board (PCB) area requirements • Leadless small SMD plastic package with solderable side pads • Exposed heat sink for excellent thermal and electrical conductivity •

文件：266.42 Kbytes 页数：12 Pages

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丝印：F6；Package：SOT1061D；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • Reduced Printed-Circuit Board (PCB) area requirements • Leadless small SMD plastic package with solderable side pads • Exposed heat sink for excellent thermal and electrical conductivity •

文件：265.7 Kbytes 页数：12 Pages

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80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • Reduced Printed-Circuit Board (PCB) area requirements • Leadless small SMD plastic package with solderable side pads • Exposed heat sink for excellent thermal and electrical conductivity •

文件：268.81 Kbytes 页数：12 Pages

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丝印：CL；Package：DFN2020D-3；45V/60V/80V, 1A NPN medium power transistors

文件：1.40285 Mbytes 页数：14 Pages

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80 V, 1 A NPN medium power transistor

NPN medium power transistor in a SOT1061 leadless very small Surface-Mounted Device (SMD) plastic package. PNP complement: BC53PA. • High current\n• Three current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• Leadless very small SMD plastic package with medium power capability\n• AEC-Q101 qualified;

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