丝印：BC516；Package：TO-92；PNP Darlington Transistor

文件：254.88 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

丝印：BC516；Package：TO-92；PNP Darlington Transistor

文件：254.88 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

PNP Darlington Transistor

Features • This Device is Designed for Applications Reguiring Extremely High Current Gain at Currents to 1 A. • This is a Pb−Free Device

文件：162.4 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

PNP Darlington transistor

DESCRIPTION PNP Darlington transistor in a TO-92; SOT54 plastic package. NPN complement: BC517. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000). APPLICATIONS • Where very high amplification is required.

文件：44.1 Kbytes 页数：8 Pages

PHI

飞利浦

PNP Silicon Darlington Transistor (High current gain High collector current)

PNP Silicon Darlington Transistor ● High current gain ● High collector current ● Complementary type: BC 517 (NPN)

文件：138.8 Kbytes 页数：4 Pages

SIEMENS

西门子

PNP Darlington Transistor

PNP Darlington Transistor • This device is designed for applications reguiring extremely high current gain at currents to 1mA. • Sourced from process 61.

文件：25.26 Kbytes 页数：3 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTOR

The BC516(PNP) and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.

文件：68.35 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

PNP Silicon Darlington Transistor

PNP Silicon Darlington Transistor

文件：78.3 Kbytes 页数：1 Pages

SEMTECH_ELEC

先之科半导体

TO-92 PACKAGE

TO-92 PACKAGE

文件：373.63 Kbytes 页数：1 Pages

KEC

KEC(Korea Electronics)

Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● High Collector Current

文件：401.89 Kbytes 页数：3 Pages

JIANGSU

长电科技