NPN EPITAXIAL SILICON TRANSISTOR

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

文件：44.87 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

Switching and Applications

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

文件：55.69 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560

文件：141.3 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

Switching and Amplifier

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

文件：151.77 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

文件：301.96 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：C547；Package：SOT-54；NPN general purpose transistors

FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC556 and BC557.

文件：47.96 Kbytes 页数：8 Pages

PHI

PHI

丝印：C547；Package：SOT-54；45 V, 100 mA NPN general-purpose transistors

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

文件：84.89 Kbytes 页数：13 Pages

PHI

PHI

SWITCHING AND AMPLIFIER APPLICATIONS

SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: BC546, VCEO=65V

文件：108.96 Kbytes 页数：4 Pages

UTC

友顺

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES • High Voltage : BC546 VCEO=65V. • For Complementary With PNP Type BC556/557/558.

文件：284.45 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Si-Epitaxial PlanarTransistors

Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Mechanical Data 1) (1) Taped in ammo pack 4000 (Raster 2.54) (2) On request: in bulk 5000 (Ra

文件：148.76 Kbytes 页数：2 Pages

DIOTEC

德欧泰克