Bipolar PNP Device in a Hermetically sealed LCC1

Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications Bipolar PNP Device. VCEO = 80V IC = 0.1A

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SEME-LAB

Bipolar Junction Transistors

TT Electronics

Round Type

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PANASONIC

松下

Round Type

Round Type φ 3.0 mm Series

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PANASONIC

松下

Silicon NPN Transistor RF Power Output

Description: The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Features: • High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz • Emitter ballasted construction and gold metallization for h

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NTE