Silicon NPN Transistor RF Power Output

Description: The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Features: • High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz • Emitter ballasted construction and gold metallization for h

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NTE

RF transistors

NTE

Switch Hall IC

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SDC

光大芯业

N-CHANNEL ELHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ELHANCEMENT MODE POWER MOS TRANSISTOR N-channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical applications include robotics, laser diode drives, UPS, SMPS a

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STMICROELECTRONICS

意法半导体

Complete antenna-to-audio evaluation system

文件：4.47086 Mbytes 页数：62 Pages

SILABS

芯科科技