Plastic-Encapsulate MOSFETS

FEATURE Excellent RDS(ON), low gate charge,low gate voltages APPLICATION Load switch and in PWM applicatopns ESD Protected up to 2kV

文件：233.93 Kbytes 页数：4 Pages

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FEATURE Excellent RDS(ON), low gate charge,low gate voltage APPLICATION Load switch and in PWM applicatopns High power and current handing capability

文件：390.71 Kbytes 页数：4 Pages

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Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES  Electrostatic Sensitive Devices.  VDS (V) = -20V  ID =-4 A  RDS(ON)

文件：406.58 Kbytes 页数：6 Pages

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文件：1.20339 Mbytes 页数：3 Pages

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至尚臻品