Amplifier Transistor

The LM337 is an adjustable 3–terminal negative voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of –1.2 V to – 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to set the output voltage. Further, it employs i

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Motorola

摩托罗拉

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications???

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications

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SEMTECH

先之科

NPN General Purpose Transistor

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WEITRON

Small Signal Transistors (NPN)

FEATURES ♦ NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. ♦ These types are also available subdi vided into three groups -16, -25, and -40, according to their DC current

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GE

NPN SILICON AF MEDIUM POWER TRANSISTOR

THE BC337, BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC337, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327, BC328 RESPECTIVELY.

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MICRO-ELECTRONICS

NPN Plastic-Encapsulate Transistors

FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.8 A Collector-base voltage V(BR)CBO : BC337 50 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

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SECOS

喜可士

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications These types are subdivided into three groups -16, -25 and -40, according to their DC current gain.

文件：203.42 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)

● High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 (PNP)

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SIEMENS

西门子

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

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JIANGSU

长电科技

TO-92 Plastic-Encapsulate Transistors (NPN)

TRANSISTOR (NPN) FEATURES ● Power dissipation

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TGS