丝印：BC309；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

文件：1.483 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BC309；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

文件：1.483 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BC309；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

文件：1.483 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BC309；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

文件：1.483 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

PNP SILICON PLANAR EPITAXIAL TRANSISTOR

THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.

文件：225.47 Kbytes 页数：4 Pages

MICRO-ELECTRONICS

SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies

文件：151.41 Kbytes 页数：5 Pages

CDIL

PNP EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Low Noise: BC309

文件：69.33 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, LOW NOISE AMPLIFIER)

GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 VCEO=-45V. • Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). • For Complementary With NPN type BC237/238/239.

文件：144.25 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

PNP EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Low Noise: BC309

文件：69.33 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies

文件：151.41 Kbytes 页数：5 Pages

CDIL