丝印：BC307；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

文件：1.483 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BC307；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

文件：1.483 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BC307；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

文件：1.483 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BC307；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

文件：1.483 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Amplifier Transistors(PNP)

Amplifier Transistors PNP Silicon

文件：110.68 Kbytes 页数：4 Pages

Motorola

摩托罗拉

PNP general purpose transistors

DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC237 and BC237B. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

文件：52.42 Kbytes 页数：8 Pages

PHI

飞利浦

PNP EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Low Noise: BC309

文件：69.33 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, LOW NOISE AMPLIFIER)

GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 VCEO=-45V. • Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). • For Complementary With NPN type BC237/238/239.

文件：144.25 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

PNP SILICON PLANAR EPITAXIAL TRANSISTOR

THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.

文件：225.47 Kbytes 页数：4 Pages

MICRO-ELECTRONICS

PNP Silicon Epitaxial Planar Transistor

for switching and amplifier applications

文件：145.87 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体