Si-Epitaxial PlanarTransistors

Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Mechanical Data 1) (1) Taped in ammo pack 4000 (Raster 2.54) (2) On reque

文件：143.32 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

PNP Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 0.625Watts of Power Dissipation. • Collector-current : -0.8A • Collector-base Voltage :VCBO=-50V(BC327) , VCBO=-30V(BC328) • Epoxy meets UL 94 V-0 flammability rating •

文件：341.41 Kbytes 页数：3 Pages

MCC

PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)

PNP Silicon AF Transistors ● High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 337, BC 338 (NPN)

文件：143.83 Kbytes 页数：6 Pages

SIEMENS

西门子

PNP GENERAL PURPOSE TRANSISTORS

1. General purpose amplifier applications 2. PNP epitaxial silicon, planar design 3. Collector current IC= -800mA

文件：146.86 Kbytes 页数：3 Pages

PANJIT

強茂

PNP Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 0.625Watts of Power Dissipation. • Collector-current : -0.8A • Collector-base Voltage :VCBO=-50V(BC327) , VCBO=-30V(BC328) • Epoxy meets UL 94 V-0 flammability rating •

文件：341.41 Kbytes 页数：3 Pages

MCC

PNP GENERAL PURPOSE TRANSISTORS

1. General purpose amplifier applications 2. PNP epitaxial silicon, planar design 3. Collector current IC= -800mA

文件：146.86 Kbytes 页数：3 Pages

PANJIT

強茂

PNP GENERAL PURPOSE TRANSISTORS

1. General purpose amplifier applications 2. PNP epitaxial silicon, planar design 3. Collector current IC= -800mA

文件：146.86 Kbytes 页数：3 Pages

PANJIT

強茂

PNP Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 0.625Watts of Power Dissipation. • Collector-current : -0.8A • Collector-base Voltage :VCBO=-50V(BC327) , VCBO=-30V(BC328) • Epoxy meets UL 94 V-0 flammability rating •

文件：341.41 Kbytes 页数：3 Pages

MCC

丝印：BC32740；Package：TO-923L；PNP Epitaxial Silicon Transistor

Features • Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low-Power Output Stages • Complement to BC337 / BC338

文件：230.79 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

PNP GENERAL PURPOSE TRANSISTORS

1. General purpose amplifier applications 2. PNP epitaxial silicon, planar design 3. Collector current IC= -800mA

文件：146.86 Kbytes 页数：3 Pages

PANJIT

強茂