丝印：2035K；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Features ⚫ Low gate chargre and RDS(on) ⚫ ESD protected(HBM) up to 2KV ⚫ VDS= -20V,ID= -4.9A RDS(on)

文件：991.83 Kbytes 页数：4 Pages

HUIXIN

慧芯电子

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

文件：135.29 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

STEREO MODULATOR

文件：252.12 Kbytes 页数：6 Pages

NJRC

日本无线

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara

文件：54.8 Kbytes 页数：2 Pages

MOSPEC

统懋