BC2003DW

N/P Channel Enhancement MOSFET

Features NChannel VDS=20V,ID=3A RDS(ON)=26mΩ@VGS=4.5V RDS(ON)=32mΩ@VGS=2.5V PChannel VDS=-20V,ID=-3A RDS(ON)=67mΩ@VGS=-4.5V RDS(ON)=90mΩ@VGS=-2.5V MainApplications BatteryProtection LoadSwitch PowerManagement

2003

HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS

Ideallysuitedforinterfacingbetweenlow-levellogiccircuitryandmultipleperipheralpowerloads,theSeriesULN20xxA/Lhigh-voltage,high-currentDarlingtonarraysfeaturecontinuousloadcurrentratingsto500mAforeachofthesevendrivers.Atanappropriatedutycycledependingonambien

2003

EUPowerSupplyCordwithIECConnectorC13,V-Lock,straight

Description -PowerCord,ProtectionclassI,Pintemperature70°C, -withV-Lockinterlockingsystem

2003

HIGHQUALITYNETWORKINGTRANSFORMERS

BGA2003

SiliconMMICamplifier

DESCRIPTION SiliconMMICamplifierconsistingofanNPNdoublepolysilicontransistorwithintegratedbiasingforlowvoltageapplicationsinaplastic,4-pinSOT343Rpackage. FEATURES •Lowcurrent •Veryhighpowergain •Lownoisefigure •Integratedtemperaturecompensatedbiasing •Con

PHI

BGU2003

SiGeMMICamplifier

PHI