BC2003DW

N/P Channel Enhancement MOSFET

Features NChannel VDS=20V,ID=3A RDS(ON)=26mΩ@VGS=4.5V RDS(ON)=32mΩ@VGS=2.5V PChannel VDS=-20V,ID=-3A RDS(ON)=67mΩ@VGS=-4.5V RDS(ON)=90mΩ@VGS=-2.5V MainApplications BatteryProtection LoadSwitch PowerManagement

BGA2003

SiliconMMICamplifier

DESCRIPTION SiliconMMICamplifierconsistingofanNPNdoublepolysilicontransistorwithintegratedbiasingforlowvoltageapplicationsinaplastic,4-pinSOT343Rpackage. FEATURES •Lowcurrent •Veryhighpowergain •Lownoisefigure •Integratedtemperaturecompensatedbiasing •Con

BGU2003

SiGeMMICamplifier

BH-2003

BH-2modularfuseblocks,700V,400A

BQ2003

Fast-ChargeIC

BQ2003

Fast-ChargeIC

BQ2003PN

Fast-ChargeIC

BQ2003PN

Fast-ChargeIC

BQ2003PN-N

Fast-ChargeIC

BQ2003S

Fast-ChargeIC