N/P Channel Enhancement MOSFET

Features N Channel  VDS=20V, ID=3A  RDS(ON)=26mΩ@VGS=4.5V  RDS(ON) =32mΩ@VGS=2.5V P Channel  VDS=-20V, ID=-3A  RDS(ON)=67mΩ@VGS=-4.5V  RDS(ON)=90mΩ@VGS=-2.5V Main Applications  Battery Protection  Load Switch  Power Management

文件：327.08 Kbytes 页数：6 Pages

GWSEMI

唯圣电子

Silicon MMIC amplifier

DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • Integrated temperature compensated biasing • Con

文件：100.4 Kbytes 页数：12 Pages

PHI

飞利浦

SiGe MMIC amplifier

文件：62.38 Kbytes 页数：8 Pages

PHI

飞利浦

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS

Ideally suited for interfacing between low-level logic circuitry and multiple peripheral power loads, the Series ULN20xxA/L high-voltage, high-current Darlington arrays feature continuous load current ratings to 500 mA for each of the seven drivers. At an appropriate duty cycle depending on ambien

文件：176.9 Kbytes 页数：10 Pages

ALLEGRO

EU Power Supply Cord with IEC Connector C13, V-Lock, straight

Description - Power Cord, Protection class I, Pin temperature 70 °C, - with V-Lock interlocking system

文件：379.57 Kbytes 页数：2 Pages

SCHURTER

硕特

HIGH QUALITY NETWORKING TRANSFORMERS

文件：28.2 Kbytes 页数：2 Pages

XFMRS