N/P Channel Enhancement MOSFET

Features N Channel • VDS=20V, ID=3A • RDS(ON)=26mΩ@VGS=4.5V • RDS(ON) =32mΩ@VGS=2.5V P Channel • VDS=-20V, ID=-3A • RDS(ON)=67mΩ@VGS=-4.5V • RDS(ON)=90mΩ@VGS=-2.5V Main Applications • Battery Protection • Load Switch • Power Management

文件：327.08 Kbytes 页数：6 Pages

GWSEMI

唯圣电子

High Current/Voltage Darlington Drivers

文件：194.56 Kbytes 页数：6 Pages

NSC

国半

High Current/Voltage Darlington Drivers

文件：194.56 Kbytes 页数：6 Pages

NSC

国半

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors Designed primarily for large–signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers • Specified 28 Volt, 2.0 GHz Characteristics: Output Power — 1.0 to 20 Watts P

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MOTOROLA

摩托罗拉