BD140

PlasticMediumPowerSiliconPNPTransistor

1.5AMPEREPOWERTRANSISTORSPNPSILICON45,60,80VOLTS10WATTS ...designedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=40(Min)@IC=0.15Adc •BD136,138,140arecomplementarywithBD135,137,139

BD140

PNPpowertransistors

DESCRIPTION PNPpowertransistorinaTO-126;SOT32plasticpackage.NPNcomplements:BD135,BD137andBD139. FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). APPLICATIONS •Generalpurposepowerapplications,e.g.driverstagesinhi-fiamplifiersandtelevisi

PHI

BD140

PNPSILICONTRANSISTORS

POWERTRANSISTORSPNPSILICON

BD140

MediumPowerLinearandSwitchingApplications

Features •ComplementtoBD135,BD137andBD139respectively Applications •MediumPowerLinearandSwitching

BD140

PNPSILICONTRANSISTORS

BD140

PNPPLASTICPOWERTRANSISTORS

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:-1.5A OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

BD140

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:-1.5A OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

BD140

Complementarylowvoltagetransistor

BD140

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-126package ·Highcurrent ·ComplementtotypeBD135/137/139 APPLICATIONS ·Driverstagesinhigh-fidelityamplifiersandtelevisioncircuits

BD140

EPITAXIALPLANARPNPTRANSISTOR

GENERALPURPOSEAPPLICATION. FEATURES •HighCurrent.(Max.:-1.5A) •DCCurrentGain:hFE=40Min.@IC=-0.15A •ComplementarytoBD139.