丝印：BB6；Package：SMA；400 W Transient Voltage Suppressor

1. General description 400 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMA Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 400 W • Reverse standoff

文件：217.72 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：S；Package：SOD-123；Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners)

Silicon Variable Capacitance Diode ● For tuning of extended frequency bands in VHF TV/VTR tuners

文件：26.7 Kbytes 页数：2 Pages

SIEMENS

西门子

丝印：S；Package：SOD-323；Silicon Variable Capacitance Diodes

Silicon Variable Capacitance Diodes • For tuning of extended frequency band in VHF TV / VTR tuners • High capactance ratio • Low series inductance • Low series resistance • Excellent uniformity and matching due to in-line matching assembly procedure • Pb-free (RoHS compliant) package1) • Qu

文件：405.46 Kbytes 页数：3 Pages

Infineon

英飞凌

丝印：DE；Package：SCD80；Silicon Variable Capacitance Diodes

Silicon Variable Capacitance Diodes • For tuning of extended frequency band in VHF TV / VTR tuners • High capactance ratio • Low series inductance • Low series resistance • Excellent uniformity and matching due to in-line matching assembly procedure • Pb-free (RoHS compliant) package1) • Qu

文件：405.46 Kbytes 页数：3 Pages

Infineon

英飞凌

丝印：S；Package：SOD-323；Silicon Variable Capacitance Diodes

文件：76.46 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：DE；Package：SCD80；Silicon Variable Capacitance Diodes

文件：76.46 Kbytes 页数：7 Pages

Infineon

英飞凌

SCHOTTKY DIODES

[ITT Components] SCHOTTKY DIODES

文件：337.56 Kbytes 页数：3 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi

文件：67.13 Kbytes 页数：13 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV/ VTR tuners)

Silicon Variable Capacitance Diode • For tuning of extended frequency band in VHF TV/ VTR tuners

文件：21.36 Kbytes 页数：3 Pages

SIEMENS

西门子

Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I)

Silicon Variable Capacitance Diode ● For Hyperband TV/VTR tuners, Bd I

文件：30.02 Kbytes 页数：2 Pages

SIEMENS

西门子