Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi

文件：67.13 Kbytes 页数：13 Pages

HitachiHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

HITACHI

日立

Low Capacitance and Insertion Loss

文件：260.92 Kbytes 页数：3 Pages

Bencent

槟城电子

BCR601 hot plug IC with voltage feedback to primary side

Features • Supply voltage 8 V to 60 V, • Supports use of NPN bipolar transistors and NMOSFETs, • 100 Hz/120 Hz supply voltage ripple suppression, • Supports an optocoupler voltage feedback loop to primary side minimizing power losses, • 3% analog dimming of LED current by a resistor or D

文件：376.31 Kbytes 页数：16 Pages

Infineon

英飞凌

Low Capacitance and Insertion Loss

文件：181.67 Kbytes 页数：3 Pages

Bencent

槟城电子