SCHOTTKY DIODES

[ITT Components] SCHOTTKY DIODES

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ETCList of Unclassifed Manufacturers

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Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi

文件：67.13 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

HITACHI

日立

VOLTAGE 50 to 1000 Volts CURRENT - P.C. MTG 3A , HEAT-SINK MTG 6A

VOLTAGE 50 to 1000 Volts CURRENT - P.C. MTG 3A , HEAT-SINK MTG 6A FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. • Surge Overload Ratings to 125 Amperes. • Low forward voltage, and reverse leakage. • Small size , simple installation.

文件：32.34 Kbytes 页数：2 Pages

PANJIT

強茂

Silicon Varistor Temperature Compensating Diode

Features: ● High reliability planar chip and glass sealing ● Low IR ● Large PD

文件：15.98 Kbytes 页数：1 Pages

NTE

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ● Glass passivated junction in P600 package ● 6 ampere operation at TA=60 ¢J with no thermal runaway ● Exce

文件：52.31 Kbytes 页数：2 Pages

PANJIT

強茂