BAS516

SWITCHINGDIODES

PRODUCTSUMMARY SOD-523Plastic-EncapsulateDiodes FEATURES Smallsurfacemountingtype Highswitchingspeed

BAS516

High-speedswitchingdiodes

Generaldescription High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed:trr≤4ns ■Lowcapacitance ■Lowleakagecurrent ■Reversevoltage:VR≤100V ■Repetitivepeakreversevoltage:VRRM≤1

BAS516

SwitchingDiode

Features ●Ultra-SmallSurfaceMountPackage ●HighSwitchingSpeed ●ForGeneralPurposeSwitchingApplications ●EpoxymeetsUL94V-0flammabilityrating ●MoistureSensitivityLevel1 ●Marking:61

BAS516

HighSpeedSwitchingDiode

FEATURES ●UltrasmallplasticSMDpackage. ●Highswitchingspeed:max.4ns. ●Continuousreversevoltage:max.75V. ●Repetitivepeakreversevoltage:max.85V ●Repetitivepeakforwardcurrent:max.500mA APPLICATIONS ●High-speedswitchinginsurfacemountedcircuits.

BAS516

High-speeddiode

DESCRIPTION TheBAS516isahigh-speedswitchingdiodefabricatedinplanartechnology,andencapsulatedintheSOD523(SC79)SMDplasticpackage. FEATURES •UltrasmallplasticSMDpackage •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.75V •Repetitivep

BAS516

High-speeddiode

DESCRIPTION TheBAS516isahigh-speedswitchingdiodefabricatedinplanartechnology,andencapsulatedintheSOD523(SC79)SMDplasticpackage. FEATURES ·UltrasmallplasticSMDpackage ·Highswitchingspeed:max.4ns ·Continuousreversevoltage:max.75V ·Repetitivep

BAS516

SwitchingDiodes

SwitchingDiodes FEATURES ●Smallsurfacemountingtype ●Highswitchingspeed

BAS516

Plastic-EncapsulatedDiodes

SwitchingDiodes FEATURES ●Smallsurfacemountingtype ●Highswitchingspeed

BAS516

Small-SignalFastSwitchingDiodes

VR100V Ifav250mA

BAS516

SURFACEMOUNTFASTSWITCHINGDIODE

FEATURES •Fastswitchingspeed •Lowreverseleakagecurrent •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device (Note3)

BAS516

High-speedswitchingdiodes

Featuresandbenefits Highswitchingspeed:trr4ns Lowleakagecurrent Repetitivepeakreversevoltage: VRRM100V AEC-Q101qualified Lowcapacitance Reversevoltage:VR100V SmallSMDplasticpackages

BAS516

High-speedswitchingdiode

1.Generaldescription High-speedswitchingdiode,encapsulatedinaultrasmallandflatleadSOD523(SC-79)Surface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •

BAS516-Q

High-speedswitchingdiode

1.Generaldescription High-speedswitchingdiode,encapsulatedinaultrasmallandflatleadSOD523(SC-79)Surface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •

BAS516S

SurfaceMountSwitchingDiode

FEATURES •Highspeedswitching •Highreliabilty MECHANICALDATA •Extremelysmallsurfacemountingtype.(EMD2) •Highspeed.(trr=4nstype.) •Siliconepitaxialplaner

BAS516WT

Plastic-EncapsulateDiodes

FEATURES SmallPackage LowReverseCurrent FastSwitchingSpeed SurfaceMountPackageIdeallySuitedforAutomaticInsertion

BC516

PNPSiliconDarlingtonTransistor

PNPSiliconDarlingtonTransistor

BC516

TO-92PACKAGE

TO-92PACKAGE

BC516

COMPLEMENTARYSILICONPLANAREPITAXIALDARLINGTONTRANSISTOR

TheBC516(PNP)andBC517(NPN)arecomplementarysiliconplanarepitaxialdarlingtontransistorsdesignedforpreamplifierinputstagesrequiringhighinputimpendenceandhighgain.

BC516

PNPDarlingtontransistor

DESCRIPTION PNPDarlingtontransistorinaTO-92;SOT54plasticpackage.NPNcomplement:BC517. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.30V) •VeryhighDCcurrentgain(min.30000). APPLICATIONS •Whereveryhighamplificationisrequired.

BC516

PNPSiliconDarlingtonTransistor(HighcurrentgainHighcollectorcurrent)

PNPSiliconDarlingtonTransistor ●Highcurrentgain ●Highcollectorcurrent ●Complementarytype:BC517(NPN)