丝印：BB5；Package：SMA；400 W Transient Voltage Suppressor

1. General description 400 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMA Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 400 W • Reverse standoff

文件：217.72 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：S；Package：SOD-323；Silicon Tuning Diode

Silicon Tuning Diode • For UHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Excellent uniformity and matching due to in-line matching assembly procedure • Pb-free (RoHS compliant) package

文件：411.12 Kbytes 页数：4 Pages

INFINEON

英飞凌

丝印：S；Package：SOD-323；Silicon Tuning Diode

Silicon Tuning Diode • For UHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Excellent uniformity and matching due to in-line matching assembly procedure • Pb-free (RoHS compliant) package

文件：910.7 Kbytes 页数：10 Pages

INFINEON

英飞凌

丝印：BB；Package：SCD80；Silicon Tuning Diode

Silicon Tuning Diode • For UHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Excellent uniformity and matching due to in-line matching assembly procedure • Pb-free (RoHS compliant) package

文件：910.7 Kbytes 页数：10 Pages

INFINEON

英飞凌

丝印：BB；Package：SCD80；Silicon Tuning Diode

Silicon Tuning Diode • For UHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Excellent uniformity and matching due to in-line matching assembly procedure • Pb-free (RoHS compliant) package

文件：411.12 Kbytes 页数：4 Pages

INFINEON

英飞凌

丝印：B；Package：SOD-523；Silicon Tuning Diode

Silicon Tuning Diode • For UHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Excellent uniformity and matching due to in-line matching assembly procedure • Pb-free (RoHS compliant) package

文件：411.12 Kbytes 页数：4 Pages

INFINEON

英飞凌

丝印：B；Package：SOD-523；Silicon Tuning Diode

Silicon Tuning Diode • For UHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Excellent uniformity and matching due to in-line matching assembly procedure • Pb-free (RoHS compliant) package

文件：910.7 Kbytes 页数：10 Pages

INFINEON

英飞凌

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi

文件：71.04 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi

文件：71 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi

文件：71 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司