Bias Controlled Monolithic IC UHF RF Amplifier

HITACHI

日立

Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-

文件：102.66 Kbytes 页数：14 Pages

HITACHIHitachi Semiconductor

日立日立公司

PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

文件：122.29 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

Small Signal Transistors

文件：56.45 Kbytes 页数：1 Pages

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