Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-1

文件：181.81 Kbytes 页数：8 Pages

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CENTRAL