UHF low voltage variable capacitance diode

文件：48.19 Kbytes 页数：7 Pages

JMNIC

锦美电子

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance @ 945 MHz, 28 Volts

文件：194.51 Kbytes 页数：9 Pages

MOTOROLA

摩托罗拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance @ 945 MHz, 28 Volts

文件：194.51 Kbytes 页数：9 Pages

MOTOROLA

摩托罗拉

Silicon Complementary Transistors Audio Power Amp, Switch

Description: The NTE184 (NPN) and NTE185 (PNP) are silicon complementary transistors in a TO126 plastic package designed for use in power amplifier and switching circuits. Features: • Excellent Safe Area Limits

文件：22.3 Kbytes 页数：2 Pages

NTE